Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-02-12 |
| Journal | Applied Physics Letters |
| Authors | Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide |
| Institutions | National Institute for Materials Science |
| Citations | 9 |
Abstract
Section titled “Abstract”High-performance boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated by improving fabrication process and device structures. Drain current maximum values for the B-diamond MOSFETs operating at room temperature and 300 °C are −1.2 and −10.9 mA/mm, respectively. Both exhibit on/off ratios higher than 109 and their extrinsic transconductance maximum values are 29.0 and 215.7 μS/mm, respectively. These properties surpass the values reported in previous studies.