Carrier trapping in diamond Schottky barrier diode
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-02-12 |
| Journal | Applied Physics Letters |
| Authors | Shota Nunomura, Isao Sakata, Taiki Nishida, Shinya Ohmagari |
| Institutions | National Institute of Advanced Industrial Science and Technology |
| Citations | 2 |
Abstract
Section titled āAbstractāCarrier trapping in a diamond Schottky barrier diode, consisting of a stack of a pā drift and p+ contact layer, is experimentally studied via subgap photocurrent measurements. In the measurements, trapped carriers are detected as an increment of the diode current under a probe light illumination in a near infrared range of 2.0 Ī¼m (0.62 eV). The density of trapped carriers is examined, and it is found to be sufficiently low, compared with that of free carriers, by an order of 105. Interestingly, the trapped carriers are observed only for the forward bias of the diode; they are not observed for the reverse bias. This suggests that the carrier trapping, yielding trapped carriers, originates from the valence band offset at the pā/p+ interface.