Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-10-05 |
| Journal | Applied Physics Letters |
| Authors | Aurélien Maréchal, Manuela Aoukar, C. Vallée, C. RiviÚre, David Eon |
| Institutions | Centre National de la Recherche Scientifique, Institut NĂ©el |
| Citations | 39 |
Abstract
Section titled âAbstractâDiamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 °C of Al2O3 on oxygen-terminated boron doped (001) diamond. Their electrical properties were investigated in terms of capacitance and current versus voltage measurements. Performing X-ray photoelectron spectroscopy based on the measured core level energies and valence band maxima, the interfacial energy band diagram configuration of the Al2O3/O-diamond is established. The band diagram alignment is concluded to be of type I with valence band offset ÎEv of 1.34 ± 0.2 eV and conduction band offset ÎEc of 0.56 ± 0.2 eV considering an Al2O3 energy band gap of 7.4 eV. The agreement with electrical measurement and the ability to perform a MOS transistor are discussed.