Investigation of cluster magnetorheological electro-Fenton composite polishing process for single-crystal GaN wafer based on BBD experimental method
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-02-12 |
| Journal | Smart Materials and Structures |
| Authors | Qiongbin Zheng, Yusen Wu, Jisheng Pan, Min Xiang, Hao Wang |
| Institutions | Guangdong University of Technology |
| Citations | 3 |
Abstract
Section titled āAbstractāAbstract A cluster magnetorheological (MR) electro-Fenton composite polishing technique was proposed in this work, which can realize high efficiency, ultra-smooth and damage-free of GaN wafer by the synergistic effect of electro-Fenton reaction and flexible mechanical removal of MR polishing. The key parameters of electro-Fenton were optimized through methyl orange degradation experiments based on BBD experimental method. The results showed that the decolorization rate had a strong dependence on H 2 O 2 concentration, Fe-C concentration and pH value, where the decolorization rate had the maximum value when the H 2 O 2 concentration of 5 wt%, Fe-C concentration of 3 wt% and pH value of 3. Compared with the Fenton reaction, the decolorization and REDOX potential of methyl orange solution were significantly improved in the electro-Fenton reaction. Furthermore, the process parameters of the cluster MR electro-Fenton composite polishing were optimized to obtain the best polishing result, which was realized under the conditions of 3 wt% diamond (grain size: 0.5 µ m), a polishing gap of 0.9 mm and a polishing time of 60 min. The novel method achieved a material removal rate of 10.79 μ m h ā1 , which was much higher than that of the conventional technique. In addition, an ultra-smooth and damage-free surface with a roughness of 1.29 nm Ra was obtained.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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