Hot ion implantation to create dense NV center ensembles in diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-03-25 |
| Journal | Applied Physics Letters |
| Authors | Midrel Wilfried Ngandeu Ngambou, P. Perrin, IonuČ Gabriel BalaČa, Alexey Tiranov, Ovidiu Brinza |
| Institutions | Centre National de la Recherche Scientifique, Chimie ParisTech |
| Citations | 6 |
Abstract
Section titled āAbstractāCreating dense and shallow nitrogen-vacancy (NV) ensembles with good spin properties is a prerequisite for developing diamond-based quantum sensors exhibiting better performance. Ion implantation is a key enabling tool for precisely controlling spatial localization and density of NV color centers in diamond. However, it suffers from a low creation yield, while higher ion fluences significantly damage the crystal lattice. In this work, we realize N2+ ion implantation in the 30-40 keV range at high temperatures. At 800 Ā°C, NVās ensemble photoluminescence emission is three to four times higher than room temperature implanted films, while narrow electron spin resonance linewidths of 1.5 MHz, comparable to well-established implantation techniques, are obtained. In addition, we found that ion fluences above 2 Ć 1014 ions/cm2 can be used without graphitization of the diamond film, in contrast to room temperature implantation. This study opens promising perspectives in optimizing diamond films with implanted NV ensembles that could be integrated into quantum sensing devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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