Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-03-25 |
| Journal | Journal of Applied Physics |
| Authors | Minghui Zhang, Wei Wang, Genqiang Chen, Rui Xie, Feng Wen |
| Institutions | Taiyuan University of Science and Technology, Hebei Semiconductor Research Institute |
| Citations | 3 |
Abstract
Section titled āAbstractāIn this work, we demonstrate a hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with Al2O3/CeB6 gate materials. The CeB6 and Al2O3 films have been deposited by electron beam evaporation technique, sequentially. For the 4/8/12/15 Ī¼m gate length (LG) devices, the whole devices demonstrate distinct p-type normally off characteristics, and all the threshold voltage are negative; all the absolute values of leakage current density are 10ā4 A/cm2 at a VGS of ā11 V, exhibiting a relatively low leakage current density compared with CeB6 FETs, and this further demonstrates the feasibility of the introduction of Al2O3 to reduce the leakage current density; the maximum drain-source current density is ā114.6, ā96.0, ā80.9, and ā73.7 mA/mm, which may be benefited from the well-protected channel. For the 12 Ī¼m LG devices, the saturation carrier mobility is 593.6 cm2/V s, demonstrating a good channel transport characteristic. This work may provide a promising strategy for the application of normally off H-diamond FETs significantly.