Surface proximal color centers in SiC - deterministic creation and emission enhancement
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2024-03-08 |
| Authors | Xiuling Li |
| Institutions | The University of Texas at Austin |
Abstract
Section titled âAbstractâOptically active defects in wide band-gap semiconductors are a leading candidate for use as ultra high-sensitivity quantum sensors of strain as well as electric and magnetic fields. The availability of large size substrates, mature epitaxial growth and fabrication techniques, and excellent optical and electrical properties make silicon carbide (SiC) attractive, in comparison to diamond, for fully integrated and electrically controllable quantum magnetometers. We present high brightness and sensitivity of ensemble surface proximal defects deterministically generated within porous silicon carbide produced by a damage-free metal-assisted chemical etching method.