Skip to content

Fabrication of lateral diamond MOSFET with buried pn-junctions by diamond surface planarization based on carbon solid solution into nickel

MetadataDetails
Publication Date2024-05-30
JournalDiamond and Related Materials
AuthorsTsubasa Kano, Kimiyoshi Ichikawa, Kan Hayashi, Taro Yoshikawa, Takao Inokuma
InstitutionsKanazawa University
Citations5

New fabrication processes for buried p+-type diamond using etching techniques based on the solid-solution reaction of carbon with nickel were proposed and demonstrated. Specifically, an inversion-channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with source and drain regions buried in the body were fabricated, and their operation were confirmed. An etching process using etching techniques based on the solid-solution reaction of carbon with nickel was applied to realize trench formation and planarization after the growth of a p+-type diamond. The fabricated MOSFET exhibited drain current density equivalent to that of conventional MOSFET with source and drain p+-type regions deposited as islands on an n-type body, and ideal field-effect transistor characteristics with linear and saturation regions, and the drain current density was controlled by the gate voltage. However, the surface protrusion structure owing to the incomplete planarization process limited the device characteristics. The proposed fabrication processes for buried layers are expected to function as an important selective doping technique for diamond electronic devices such as ion implantation.

  1. 1993 - Device properties of homoepitaxially grown diamond [Crossref]
  2. 1997 - The measurement of thermal properties of diamond [Crossref]
  3. 2014 - High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance [Crossref]
  4. 2008 - Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices [Crossref]
  5. 2022 - Radiation damage in (001) diamond induced by phosphorus ion implantation [Crossref]
  6. 2018 - Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour [Crossref]
  7. 2010 - Anisotropic etching of diamond by molten Ni particles [Crossref]
  8. 2016 - Atomically flat diamond (100) surface formation by anisotropic etching of solid-solution reaction of carbon into nickel [Crossref]
  9. 2021 - Mechanical damage-free surface planarization of single-crystal diamond based on carbon solid-solution into nickel [Crossref]
  10. 2021 - Diamond microfabrication by imprinting with nickel mold under high temperature [Crossref]