Radiation Effects in Diamond pHEMTs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-07-03 |
| Journal | ECS Transactions |
| Authors | Aayush Thapa, David I. Shahin, A. Christou |
| Institutions | University of Maryland, College Park |
Abstract
Section titled āAbstractāField effect transistors (FET) based on diamond have 2-dimensional hole gas (2DHG) as conduction channel. In terms of usability in harsh environment, an important aspect of diamond-based FETs is its promise of radiation hardness. Two different types of radiation were used. A cyclotron was used for proton irradiation on diamond substrates, and a high capacity dry cell, panoramic gamma irradiator with 60Co as source material was used for gamma irradiation on diamond-based FETs. Diamond substrates were irradiated with protons at 152 keV and fluence of 1012 particles/cm2.