Room Temperature Bonding of CVD Polycrystalline Diamond Wafers to Semiconductor and Piezo-electric Single Crystalline Wafers
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-05-28 |
| Authors | Tadatomo Suga, Junsha Wang, Kazuya Yamamura, I. Kataoka |
| Institutions | The University of Osaka, Meisei University |
| Citations | 4 |
Abstract
Section titled āAbstractāTo achieve the room temperature bonding of CVD polycrystalline diamond wafers to other semiconductor or piezoelectric single crystalline wafers, plasma assisted polishing (PAP) combined with gas cluster ion beam (GCIB) irradiation was firstly proposed to polish diamond wafers. Using this new polishing method, the peak-to-valley (Pv) value and root-mean-square (RMS) surface roughness of 2-inch polycrystalline diamond wafers were controlled to within 3 Āµm and 1 nm, respectively. The polished 2 inch diamond wafers were for the first time successfully bonded to 4 inch LiNbO <inf xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>3</inf> and 2 inch GaN wafers at room temperature using surface activated bonding (SAB) with Si nano-adhesion layer.