High Field Transport in (Ultra) Wide Bandgap Semiconductors - Diamond Versus Cubic GaN
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-07-15 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | J. Lee, C. Bayram, JeanāPierre Leburton |
| Institutions | University of Illinois Urbana-Champaign |
| Citations | 2 |
Abstract
Section titled āAbstractāWe provide an analysis of nonlinear transport in diamond and cubic GaN (c-GaN) with emphasis on the different types of optical phonon scattering [i.e., optical deformation potential (ODP) scattering versus polar optic phonon (POP) scattering] limiting the carrier velocity. Both types of carrier mobilities and carrier saturation (peak) velocities in diamond and c-GaN as functions of different doping types and concentrations are obtained by directly solving the Boltzmann equation. Our model indicates that the nonrandomizing nature of POP scattering causes carrier temperature cooling, resulting in higher carrier drift velocity than with ODP scattering. This effect, in addition to the small carrier effective masses and large optical phonon energies, is responsible for the higher peak velocities in c-GaN, compared to carrier drift velocity in diamond.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2008 - Gallium Nitride Electronics