Intrinsic Mobility of Low-Density Electrons in Photoexcited Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-03-23 |
| Journal | Physical Review Applied |
| Authors | K. Konishi, Ikuko Akimoto, Hideto Matsuoka, Jan Isberg, N. Naka |
| Institutions | Kyoto University, Wakayama University |
| Citations | 2 |
Abstract
Section titled āAbstractāThe cyclotron-resonance method reveals the drift mobility of carriers in semiconductors, which determines a deviceās (opto)electronic functionality. However, determining the intrinsic mobility value without interference from other carriers, dislocations, impurities, etc. remains challenging. By minimizing the density of photoexcited carriers in ultrapure diamond, the authors find an extraordinarily narrow cyclotron-resonance curve for electrons in diamond at 3 K. In this manner they obtain a corrected mobility value of 10${}^{8}$ cm${}^{2}$ V${}^{\ensuremath{-}1}$ s${}^{\ensuremath{-}1}$, a 16-fold increase compared to the previous record value for diamond.