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Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2024-07-19
JournalACS Applied Electronic Materials
AuthorsFilip Gucmann, Biwei Meng, AleÅ” ChvĆ”la, R. KĆŗdela, Chao Yuan
InstitutionsSlovak University of Technology in Bratislava, Institute of Electrical Engineering of the Slovak Academy of Sciences
Citations3

Abstract

Section titled ā€œAbstractā€

High-frequency wireless communication in consumer, defense, and space applications heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka wireless bands (āˆ¼8-40 GHz) are covered by GaN and GaAs-based devices, respectively, to the desired output power. GaAs-based high-electron mobility transistors (HEMTs) provide an unprecedented ultralow-noise high-frequency operation even at cryogenic temperatures, critically important for the high-fidelity amplification of weak qubit states in quantum computing. Increased output power from GaAs-based devices while maintaining low self-heating is an important but challenging objective. In this study, we used an epitaxial lift-off (ELO) technique to transfer GaAs nanomembranes onto foreign substrates (sapphire, Si, and SiC) and analyzed the thermal properties of the van der Waals-bonded GaAs films by nanosecond transient thermoreflectance (TTR). Electrothermal simulation of a GaAs HEMT was used to predict the thermal performance of the transferred devices, and a significant decrease of āˆ¼30% in the device thermal resistance (Rth) was observed when SiC and diamond substrates were used. Our results also predict that the on-state channel temperature rise can be further decreased by āˆ¼29 to 41% if the GaAs/substrate interface is improved by increased thermal boundary conductance. Our study finds that the ELO-transferred GaAs HEMTs onto foreign highly thermally conductive substrates can significantly improve their thermal performance and allow for higher output while keeping the on-state temperature within the safe operating margin.

Tech Support

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Original Source

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References

Section titled ā€œReferencesā€
  1. 2020 - 2020 IEEE/MTT-S International Microwave Symposium (IMS) [Crossref]

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