Pressure Dependence of Deep Centers by Capacitance Spectroscopies Inside the Diamond Anvil Cell
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-07-15 |
| Journal | OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) |
| Authors | Peter Y. Yu, Mingfu Li |
| Institutions | University of California, Berkeley, Lawrence Berkeley National Laboratory |
Abstract
Section titled āAbstractāThe use of diamond anvil high-pressure cells to study deep centers in semiconductors by means of capacitance transient spectroscopies is described. The technique is illustrated by recent results on DX centers induced by pressure in GaAs, the P<sub>b</sub> center at the SiO<sub>2</sub>/Si interface and the Schottky barrier formed by Pt on GaAs.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None