Over 1 A Operation of Vertical-Type Diamond MOSFETs
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-08-07 |
| Journal | IEEE Electron Device Letters |
| Authors | Nobutaka Oi, Satoshi Okubo, Ikuto Tsuyuzaki, Atsushi Hiraiwa, Hiroshi Kawarada |
| Institutions | Waseda University |
| Citations | 4 |
Abstract
Section titled “Abstract”Diamond is a promising material for p-channel power field-effect transistors (FETs) due to its remarkable physical properties. However, no diamond FETs with current characteristics exceeding 1 A have so far been reported. P-channel FETs capable of high-current operation are essential in order to realize complementary inverters with n-channel wide bandgap devices such as SiC or GaN. In this work, we designed and fabricated vertical-type diamond metal-oxide-semiconductor FETs (MOSFETs) with a trench structure, and a gate width (W <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>G</sub> ) of 0.1 to 10 mm. For devices with W <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>G</sub> = 10 mm and a source-drain voltage ( <italic xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>V</i> <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DS</sub> ) of -20 V, the drain current reached 0.7 A. We obtained a maximum drain current of over 1.5 A with <italic xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>V</i> <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DS</sub> = -20 V by connecting two devices in parallel within a chip. The drain current density and specific on-resistance at a <italic xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>V</i> <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DS</sub> of -10 V were 85 mA/mm and 118 Ω·mm, respectively (W <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>G</sub> = 2 mm). The leakage current in the off state is at the lower limit of the measurement (~10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-11</sup> A) and the on/off ratio is over nine orders of magnitude.