Skip to content
6CCVD Research

Study on the mechanism and machining characteristics of single-crystal silicon cutting by micro-discharge abrasive cutting

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2024-11-01
JournalJournal of Materials Research and Technology
AuthorsZhen Yuan Jia, Shujuan Li, Wei Shao, Haitao Shi, Jiabin Wang
Citations2

Abstract

Section titled ā€œAbstractā€

In response to the current challenges of low cutting efficiency and poor surface quality in processing single-crystal silicon, this article proposes the utilization of the micro-discharge abrasive cutting (MDAC) method for processing single-crystal silicon. A comprehensive comparison is conducted among the processing characteristics of the new cutting method and fixed abrasive wire sawing (FAWS) and wire electrical discharge machining (WEDM), including cutting efficiency, surface morphology, subsurface damage, surface roughness, wire saw wear, elemental spectrum analysis, and kerf width. Besides, two material removal modes at different feed rates are discussed. The results indicate that compared with WEDM, MDAC has the advantages of minimal subsurface damage, low surface roughness, low residual elements, and small kerf width. MDAC has higher cutting efficiency and shallower scratch depth than FAWS. However, compared with WEDM and FAWS, MDAC results in more significant wire saw wear and leaves a small amount of residual nickel on the silicon surface. In MDAC, the discharge occurs first. When the discharge energy within the pulse width is sufficient to remove the material within the current pulse cycle, the material is completely removed by the discharge action, the discharge products remain on the surface of the silicon wafer. When the discharge energy is insufficient to remove the material within the current pulse cycle, the silicon ingot is removed under the combined action of discharge and grinding, the diamond on wire saw surface will remove most of the discharge products.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2024 - Challenges remain for 2D semiconductor growth [Crossref]
  2. 2024 - Atomic-scale smoothing of semiconducting oxides via plasma-enabled atomic-scale reconstruction [Crossref]
  3. 2018 - A novel ductile machining model of single-crystal silicon for freeform surfaces with large azimuthal height variation by ultra-precision fly cutting [Crossref]
  4. 2013 - Study of small holes on monocrystalline silicon cut by WEDM [Crossref]
  5. 2022 - Effect of capillary adhesion on fracture of photovoltaic silicon wafers during diamond wire slicing [Crossref]
  6. 2018 - Review of status developments of high-efficiency crystalline silicon solar cells
  7. 2023 - Modeling and experimental investigation of monocrystalline silicon wafer cut by diamond wire saw [Crossref]
  8. 2023 - Material removal mechanism and subsurface characteristics of silicon 3D nanomilling [Crossref]
  9. 2018 - A comprehensive study on slicing processes optimization of silicon ingot for photovoltaic applications [Crossref]
  10. 2021 - Silicon recycling and iron, nickel removal from diamond wire saw silicon powder waste: synergistic chlorination with CaO smelting treatment [Crossref]

Reads Similar to This

Moving arc electrical discharge machining of polycrystalline diamond Finite Element Analysis on Processing of PCD End-Mill Milling Copper Experimental study on manufacturing of grits-spiral- distribution electroplated wire saw