Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-01-06 |
| Journal | Applied Physics Letters |
| Authors | Xiaozhuang Lu, Q. B. Liu, Cui Yu, Shiwei Feng, Zhihong Feng |
| Institutions | Hebei Semiconductor Research Institute, Beijing University of Technology |
| Citations | 1 |
Abstract
Section titled āAbstractāWith the miniaturization of electronic devices, thermal management has become a critical challenge, especially for high-power systems where efficient heat dissipation is essential. Polycrystalline diamond films, renowned for their exceptional thermal conductivity, offer a promising solution. However, the thermal boundary resistance (TBR) at the diamond/substrate interface remains a significant bottleneck, severely impacting heat dissipation efficiency. This study presents a measurement approach tailored for quantifying TBR in thick-film diamond heterostructures, focusing on diamond-on-silicon (Diamond-on-Si) systems with a silicon nitride barrier layer. Compared to conventional methods, such as transient thermoreflectance techniques, which often exhibit limited sensitivity for thick layers, this approach demonstrates greater reliability and applicability. The findings establish a foundation for advancing strategies to reduce TBR and improve the thermal management performance of diamond films in high-power electronic applications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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