Skip to content

Catalytic-enhanced thermal hydrogen-termination of diamond for electronic applications

MetadataDetails
Publication Date2025-03-18
JournalDiamond and Related Materials
AuthorsChunlin Qu, Isha Maini, Jingyi Zhang, Alexey Y. Ganin, David A. J. Moran

In this work we demonstrate a new method to terminate the surface of single crystal (100) diamond with hydrogen using low hydrogen-concentration (5 % H2:95 % Ar) forming gas and platinum (Pt) and palladium (Pd) thin films which catalytically enhance the investigated thermal hydrogen termination process. The resultant hydrogen termination is verified by electrical characterization and contact wetting angle measurements. A sheet resistance of the diamond surface as low as 11.3 kĪ©/ā–” is achieved due to transfer doping in air and a contact angle up to 90° is simultaneously achieved as associated with the hydrophobicity of hydrogen-terminated diamond. This work demonstrates a readily accessible processing method to hydrogen terminate the diamond surface to achieve high conductivity without the requirement for a pure hydrogen source or dedicated plasma equipment.

  1. 2011 - Electron and hole drift velocity in chemical vapor deposition diamond
  2. 2019 - Boron doped diamond films: a microwave attenuation material with high thermal conductivity [Crossref]
  3. 2007 - n-Type doping of diamond
  4. 2000 - Origin of surface conductivity in diamond [Crossref]
  5. 2004 - Surface transfer doping of diamond [Crossref]
  6. 2017 - Normally-off C-H diamond MOSFETs with partial C-O channel achieving 2-kV breakdown voltage [Crossref]
  7. 2012 - Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz [Crossref]
  8. 2001 - Quantum computation using the 13C nuclear spins near the single NV defect center in diamond [Crossref]
  9. 2012 - Charge state manipulation of qubits in diamond [Crossref]