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Phase relations of semiconductors SnSe and GeSe at high pressures and high temperatures

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-06-09
JournalJournal of Applied Physics
AuthorsJunkai Deng, Yuyang Shi, Yuhua Luo, Tian Qin, Ye Wu
InstitutionsWuhan University of Technology
Citations1

Abstract

Section titled ā€œAbstractā€

The group IV-VI monochalcogenides have attracted widespread attention because of their rich structural characteristics and diverse physical properties. SnSe and GeSe, as typical IV-VI monochalcogenides, have been extensively investigated due to their potential applications in thermoelectric, electronic, and optoelectronic fields. Both SnSe and GeSe undergo phase transitions at high pressures (P) or high temperatures (T), which have significant effects on their physical properties and further application prospect. However, phase relations of these two materials at simultaneous high P-T conditions remain unclear experimentally. Here, a series of in situ measurements of Raman spectroscopy on SnSe and GeSe have been performed at high P-T conditions up to about 35 GPa and 923 K. SnSe has been observed transforming from the Pnma structure to the Cmcm structure at either high P, or high T, or high P-T conditions. The Pnma to Cmcm phase transition boundary of SnSe at high P-T conditions has been determined experimentally. The phase transition of SnSe at high P-T is reversible after cooling temperature and releasing pressure to ambient conditions. The isostructural GeSe shows no phase transition up to āˆ¼35 GPa and 923 K, the highest P-T conditions in this work. The present study illustrates phase relations of semiconductors SnSe and GeSe at high P-T conditions accomplished by externally heated diamond anvil cell techniques, which lay the foundation for their P-T phase diagrams at high P-T conditions and shed light on their potential applications under extreme conditions.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2009 - Phase equilibria in ternary reciprocal systems based on IV-VI compounds [Crossref]
  2. 1984 - Temperature and pressure induced phase transition in IV-VI compounds [Crossref]
  3. 2003 - High pressure structural phase transitions in IV-VI semiconductors [Crossref]
  4. 2015 - First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS [Crossref]
  5. 1986 - Neutron diffraction study of the structural phase transition in SnS and SnSe [Crossref]
  6. 2013 - Phase transitions in PbTe under quasi-hydrostatic pressure up to 50ā€‰GPa [Crossref]
  7. 2013 - Temperature dependent band gap in PbX (Xā€‰=ā€‰S, Se, Te) [Crossref]
  8. 2014 - Local off-centering symmetry breaking in the high-temperature regime of SnTe [Crossref]
  9. 2017 - High-pressure synthesis and characterization of Ī²-GeSeā€”A six-membered-ring semiconductor in an uncommon boat conformation [Crossref]
  10. 2015 - Revisit of pressure-induced phase transition in PbSe: Crystal structure, and thermoelastic and electrical properties [Crossref]

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