Atomically Precise Graphene Nanoribbons - The Road Towards Device Integration
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-07-11 |
| Journal | ECS Meeting Abstracts |
| Authors | Gabriela Borin Barin |
Abstract
Section titled āAbstractāGraphene nanoribbons (GNRs) show exciting properties deriving from electron confinement and related band gap tunability 1 . The ability to tune GNRsā electronic and magnetic properties at the single atom level makes them an ideal platform for a wide range of device applications, from classical transistors to spintronics. In this talk, I will discuss the necessary steps to bring GNRs from ultra-high vacuum (UHV) to device integration, focusing on the main aspects of synthesis, characterization, substrate transfer, and transport measurements. After the on-surface synthesis in UHV, GNRs are transferred using different methods based on wet 2 and semi-dry/dry-transfer approaches. Those processes allow the characterization of GNRās fingerprint modes and overall alignment via Raman spectroscopy (in UHV and upon exposure) 3,4 and the characterization of their electronic properties on decoupled substrates such as quasi-free-standing graphene on SiC. We integrate different armchair GNRs (5-, 9-, 17-AGNRs) into field-effect transistors with different gate and contact configurations. We demonstrate the highest I on current GNR-FET device to date by using a double-gate configuration 5 with stability over 1000 cycles 6 . 9-AGNR-FETs show I on currents up to 12Ī¼A and I on /I off up to 10 5 . By integrating 9-AGNRs into FET devices using graphene and carbon nanotubes 6 as electrodes, we also report tunable multi-gate devices showing quantum dot behavior with rich Coulomb diamond patterns, Figure 1. 1. Cai et al. , Nature, 466 , 470-473 (2010) 2. Borin Barin et al ., ACS Applied Nanomaterials, 2 , 2184-2192, (2019) 3. Darawish et al. , Carbon , 218 , 118688, (2024) 4. Borin Barin et al. , Nanoscale , 15 , 16766-16774 (2023) 5. Mutlu et al. , IEEE International Electron Devices Meeting , 37.4. 1-37.4. 4, (2021) 6. Mutlu et al, ACS Nano, 18, 22949-22957, (2024) 7. Zhang et al., Nature Electronics, 6 , 572-581 (2023) Figure 1: a) and b) precursor monomers for GNRs with different edge topology and correspondent noncontact atomic force microscopy (nc-AFM) images, c) Raman spectra of 5-AGNRs with the assignment of the most prominent peaks on Au (111) and on the device substrate after transfer; atomic displacement profiles obtained from DFT calculations of 5-AGNRs, d) Schematic of the device, using CNT as electrodes, including the measurement circuit; stability diagram showing single-electron charging behaviour. Figure 1