High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2025-07-22 |
| Journal | Nano Letters |
| Authors | Paul Fisher, Alexander Zappacosta, Jens Fuhrmann, Benjamin Haylock, Weibo Gao |
| Institutions | Nanyang Technological University, Friedrich-Alexander-Universität Erlangen-Nßrnberg |
| Citations | 2 |
Abstract
Section titled âAbstractâHigh-resolution nanoscale nuclear magnetic resonance (NMR) allows measurement of chemical structure at the single-molecule level for determining molecular dynamics. Until now, nitrogen vacancy centers in diamond have been the only platform to demonstrate single-defect NMR sensing at sub-Hz spectral resolution. Using a single silicon vacancy defect prepared under CMOS-compatible conditions in commercial 4H-silicon carbide at room temperature, we use the Synchronized Readout technique to measure a test signal. We achieve a spectral resolution of 0.33 Hz, necessary for understanding molecular structure, and estimate a magnetic sensitivity of 358 ÎźT/<mml:math xmlns:mml=âhttp://www.w3.org/1998/Math/MathMLâ><mml:msqrt><mml:mrow><mml:mi>H</mml:mi><mml:mi>z</mml:mi></mml:mrow></mml:msqrt></mml:math> for our system. We also explore the necessary improvements for achieving single-proton spin sensitivity. Combining these results with future integrated photonics shows a promising path toward scalable nanoscale sensing for low-cost NMR spectrometers based on an industry-mature silicon carbide material.