Strain Effects in a Directly Bonded Diamond‐on‐Insulator Substrate
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2025-07-22 |
| Journal | physica status solidi (a) |
| Authors | Ioannis Varveris, Gianni D. Aliberti, Tianyin Chen, Filip A. Sfetcu, Diederik J. W. Dekker |
| Institutions | QuTech, Delft University of Technology |
| Analysis | Full AI Review Included |
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Executive Summary
Section titled “Executive Summary”- Value Proposition: Demonstrates a methodology for assessing the quality and strain in directly bonded diamond-on-insulator (DOI) substrates, crucial for advancing scalable quantum technologies.
- Achievement: Characterized strain-induced lattice distortions in DOI substrates using nitrogen-vacancy (NV) centers via ODMR and PL mapping.
- Method: Combined ODMR and PL mapping to assess bonding quality and strain impact on NV centers.
- Observation: Detected interference fringes in unbonded regions, indicating bonding irregularities.
- Quantified Strain: Measured an increase in volumetric strain (≈0.45 MHz) and shear strain (~0.71 MHz) from the top surface to the DOI interface.
- Emitter Integrity: ODMR signal contrast and peak linewidth remained largely unaffected, suggesting no significant deterioration in emitter optical properties.
- Impact: Establishes a robust method for assessing DOI substrate quality, essential for integrated photonic circuits.
Technical Specifications
Section titled “Technical Specifications”| Parameter | Value | Unit | Context
View Original Abstract
The direct bonding process of a diamond‐on‐insulator (DOI) substrate enables monolithic integration of diamond photonic structures for quantum computing by improving photon collection efficiency and entanglement generation rate between emitters. It also addresses key fabrication challenges, such as robustness, bonding strength, and scalability. This study investigates strain effects in DOI substrates following direct bonding. Strain generation is expected near the diamond-SiO 2 /Si interface due to the thermal expansion coefficient mismatch between the bonded materials. Strain‐induced lattice distortions are characterized using nitrogen‐vacancy (NV) centers in diamond via optically detected magnetic resonance (ODMR) and photoluminescence (PL) mapping. PL mapping reveals interference fringes in unbonded regions, indicating bonding irregularities. Depth‐resolved ODMR measurements show a volumetric strain component increase of ≈0.45 MHz and a shear component increase of ≈0.71 MHz between the top surface and the DOI interface. However, ODMR signal contrast and peak linewidth remain largely unaffected, suggesting no visible deterioration in the optical properties of the emitters. By combining ODMR and PL mapping, this work establishes a robust methodology for assessing bonding quality and strain impact on NV centers, an essential step toward advancing scalable quantum technologies and integrated photonic circuits.