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Impurity analysis of synthetic diamond for electronics and quantum physics

MetadataDetails
Publication Date2025-07-30
JournalJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
AuthorsEstelle Loire, Rémi Gillet, Mohamed Bouras, François Jomard, M.A. Pinault-Thaury
InstitutionsUniversité de Versailles Saint-Quentin-en-Yvelines, Centre National de la Recherche Scientifique

Diamond is an ultrawide bandgap semiconductor with exceptional physical properties, making it highly suitable for various advanced applications. However, precise doping control remains a challenge, particularly for n-type conductivity due to doping asymmetry. Additionally, in quantum applications, phosphorus donors enhance nitrogen-vacancy center coherence times, requiring precise impurity level control. This work presents a secondary ion mass spectrometry (SIMS) study on impurities analysis in diamond, focusing on hydrogen, boron, carbon isotope, nitrogen, and phosphorus. Using four implanted standards and two lab-grown samples, we optimized SIMS conditions to improve the detection limits and isotopic ratio measurements. We measured a 13C/12C isotopic ratio of ∌0.004% in a 13C-depleted diamond layer. At low mass resolution, we showed detection limits of up to 1.5 × 1016 and 3.0 × 1015 at/cm3 for boron and phosphorus, respectively. For hydrogen, the increase in the sputtering rate enabled us to move from 4.7 × 1018 to 6.3 × 1017 at/cm3. High mass resolution settings enabled phosphorus detection limits to reach above 3.0 × 1014 at/cm3. Concerning nitrogen, we use an ultrapure lab-grown layer to achieve the measurement of a detection limit of 2.3 × 1016 at/cm3, thanks to the raster size reduction. These results provide crucial insights into impurities’ characterization in diamond, supporting advancements in diamond-based electronic and quantum applications.

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