A perspective on diamond heterojunction devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-08-18 |
| Journal | Applied Physics Letters |
| Authors | Runcheng Zhang, Nianhua Peng, Haitao Ye |
| Institutions | Fudan University, University of Surrey |
Abstract
Section titled āAbstractāAs the demand for faster, more efficient, and durable electronic devices surges in the age of 5G, electric vehicles, and quantum technologies, researchers are turning to unconventional materials to push the boundaries of what is possible. Among these materials, diamond, long admired for its unmatched thermal conductivity, extreme hardness, and wide bandgap, has emerged as a game-changing contender. When combined with advanced heterojunction architectures, diamond-based heterojunction devices offer a groundbreaking platform that surpasses the limitations of traditional semiconductors like silicon, GaN, and SiC. With potential applications spanning from ultra-fast power electronics to next-generation quantum computing and high-frequency radio frequency (RF) systems, diamond heterojunction devices hold the key to revolutionizing electronics in ways previously unimaginable. This review delves into the remarkable advancements in diamond-based heterojunction devices, highlighting their applications in power electronics, RF systems, quantum technologies, and extreme-environment sensors. Finally, we summarize the current challenges facing diamond heterojunctions and provide an outlook on their transformative potential across the future landscape of high-performance electronics.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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