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6CCVD Research

Band offset between cubic boron nitride and nitrogen-plasma terminated boron-doped diamond (111)

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-10-23
JournalApplied Physics Letters
AuthorsAli Ebadi Yekta, Martha R. McCartney, David J. Smith, Norio Tokuda, R. J. Nemanich
InstitutionsNanomaterials Research (United States), Arizona State University

Abstract

Section titled ā€œAbstractā€

Diamond electronics has attracted attention for high power and high frequency device applications. Cubic boron nitride (c-BN) may be considered as a suitable dielectric layer for electron channel diamond metal-insulator-semiconductor field effect transistors (MISFETs) provided that its valence band edge can be positioned above that of diamond. This study reports experimental measurement of the valence band offset (VBO) between c-BN and nitrogen-plasma terminated boron-doped diamond (111). Nitrogen plasma processing was used to produce C-N bonding at the diamond surface. Electron cyclotron resonance plasma enhanced chemical vapor deposition was then used to deposit epitaxial c-BN films on the N-terminated diamond substrate, as confirmed by cross-sectional high-resolution electron microscopy. X-ray and ultraviolet photoemission spectroscopies indicated that the valence band maximum of c-BN is positioned 0.4 eV above that of diamond resulting in a type II staggered band alignment. This result is consistent with theoretical predictions of the VBO between the two materials in the (111) surface orientation, indicating that c-BN with C-N interface bonding can be used as a dielectric layer for electron channel diamond (111) MISFET devices.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  2. 2017 - Band offsets of epitaxial cubic boron nitride deposited on polycrystalline diamond via plasma-enhanced chemical vapor deposition [Crossref]
  3. 1950 - Crystal structure of boron nitride [Crossref]
  4. 1976 - Solid State Physics
  5. 2023 - Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition [Crossref]
  6. 2003 - Epitaxy of cubic boron nitride on (001)-oriented diamond [Crossref]
  7. 2015 - Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride [Crossref]
  8. 2024 - Face-centered cubic carbon as a fourth basic carbon allotrope with properties of intrinsic semiconductors and ultra-wide bandgap [Crossref]
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  10. 2008 - Diamond as an electronic material [Crossref]

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