Rapid Growth of Polycrystalline Diamond Films by MPCVD at High Gas Pressure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Authors | Xueqi Zhou |
| Institutions | Advanced Diamond Technologies (United States) |
Abstract
Section titled āAbstractāRecent studies showed that increasing gas pressure and microwave power were effective methods to improve growth rate of diamond films by microwave plasma chemical vapor deposition( MPCVD). In this paper,polycrystalline diamond films were obtained at different methane concentrations in a newly developed cylindrical MPCVD reactor, using H2-CH4 as source gas. The gas pressure and input microwave power were fixed at 30 kPa and 5. 8 kW respectively. Surface morphologies,phases and qualities of the diamond films were measured by scanning electron microscopy,X-ray diffraction and Raman spectroscopy technologies. The results demonstrate that the growth rate of high quality diamond films deposited at high gas pressure raised from 7. 5Ī¼m/h to 27. 5Ī¼m/h when methane concentrations increased from 2. 5% to 5%.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None