Gan-on-diamond wafers - Recent developments
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-03-01 |
| Authors | Felix Ejeckam, Daniel Francis, Firooz Faili, Frank Lowe, Daniel J. Twitchen |
| Institutions | Element Six (United States) |
| Citations | 4 |
Abstract
Section titled āAbstractāIn this work, we discuss the state-of-the-art of GaN-on-diamond wafer technology at Element Six. We report our recent demonstration of 100mm (4ā) GaN-on-diamond HEMT epitaxial wafers-with the highest thermal conductivity of diamond (>1500 W/mK) yet. The wafers exhibit <;20Ī¼m bow mounted on-carrier, sheet resistivity of <;450 Ohms/sq, and CV specs that are in-line with industry expectations.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - 3,000+ Hours Continuous Operation of GaN-on-Diamond HEMTs at 350C Channel Temperature
- 2013 - Wafer-Scale GaN HEMT Performance Enhancement by Diamond Substrate Integration
- 2014 - Analysis and Characterization of Thermal Transport in GaN HEMTs on SiC and Diamond Substrates