Low temperature growth of Co2MnSi films on diamond semiconductors by ion-beam assisted sputtering
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-04-13 |
| Journal | Journal of Applied Physics |
| Authors | M. Nishiwaki, K. Ueda, H. Asano |
| Institutions | Nagoya University |
| Citations | 3 |
Abstract
Section titled āAbstractāHigh quality Schottky junctions using Co2MnSi/diamond heterostructures were fabricated. Low temperature growth at ā¼300-400 Ā°C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co2MnSi/diamond interfaces. Only the Co2MnSi films formed at ā¼300-400 Ā°C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co2MnSi films, of ā¼0.3% at 10 K. Schottky junctions formed using the Co2MnSi films showed clear rectification properties with rectification ratio of more than 107 with Schottky barrier heights of ā¼0.8 eV and ideality factors (n) of ā¼1.2. These results indicate that Co2MnSi films formed at ā¼300-400 Ā°C by IBAS are a promising spin source for spin injection into diamond semiconductors.