3 µm thick GaSb membrane diodes integrated with CVD diamond heat spreaders for thermally managed TPV cells
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-06-01 |
| Authors | Emma J. Renteria, Sadhvikas Addamane, Darryl Shima, C.P. Hains, Ganesh Balakrishnan |
| Institutions | University of New Mexico |
| Citations | 2 |
Abstract
Section titled “Abstract”We demonstrate the integration of 3μm thick GaSb PN junctions with CVD diamond heat spreaders. The GaSb diodes are grown metamorphically on a GaAs substrate, bonded to CVD diamond by a solder process and isolated from the GaAs substrate by wet etching. Electrical characterization shows good diode behavior with a turn on voltage of 0.5 V and a reverse-bias leakage current of 1.12 mA.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1998 - CVD diamond: a new engineering material for thermal, dielectric and optical applications