Heat dissipation improvement with diamond heat spreader on hybrid Si micro-cooler for GaN devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-06-01 |
| Authors | Yong Han, Boon Long Lau, Gongyue Tang, Xiaowu Zhang |
| Institutions | Singapore Science Park, Agency for Science, Technology and Research |
| Citations | 5 |
Abstract
Section titled āAbstractāA diamond heat spreader of small size has been directly attached between the chip and the hybrid Si micro-cooler for thermal performance improvement of the GaN-on-Si device. In the fabricated test vehicle, one hotspot of size 450Ć300μm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> is used to mimic the heating area of one GaN unit. The microwave CVD diamond of high thermal conductivity was bonded through TCB process. With the diamond heat spreader attached on the reduced by 25.7% and 26.1%, respectively. Two types of diamond heat spreader of different thermal conductivities are tested and compared. High improvement of heat dissipation capability has been demonstrated.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2008 - Single-phase Hybrid Micro-channel/Microjet Impingement Cooling
- 2007 - Performance-Cost Optimization of a Diamond Heat Spreader