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6CCVD Research

Power devices on bulk gallium nitride and diamond substrates - An overview of ARPA-E's SWITCHES program

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2015-06-01
AuthorsTimothy Heidel, P.M. Gradzki, D. Henshall
InstitutionsDefense Advanced Research Projects Agency, Booz Allen Hamilton (United States)
Citations1

Abstract

Section titled ā€œAbstractā€

Wide bandgap (WBG) power semiconductor devices offer substantial energy efficiency opportunities in a wide range of applications. The Advanced Research Projects Agency-Energy (ARPA-E) has invested in WBG power semiconductor devices since 2010. ARPA-Eā€™s ADEPT (Agile Delivery of Electrical Power Technologies) program, funded several teams to develop a range of SiC and GaN devices and demonstrate their efficacy in power converters. Despite recent progress, high cost remains an important barrier to the widespread adoption of WBG devices. Also, most WBG discrete devices demonstrated to date have had relatively low current ratings.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2011 - Which are the Future GaN Power Devices for Automotive Applications, Lateral Structures or Vertical Structures?

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