Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-02-26 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Jiangwei Liu, Tokuyuki Teraji, Bo Da, Hirotaka Ohsato, Yasuo Koide |
| Institutions | National Institute for Materials Science |
| Citations | 11 |
Abstract
Section titled “Abstract”In this article, we report the fabrication and characterization of boron-doped diamond (B-diamond) Schottky diodes and MESFETs. Effects of annealing at 573- 973 K on the electrical properties of these devices are investigated. Current density maximum for the as-fabricated Schottky diode is 0.05 A/cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> at a gate voltage of -10.0 V. Annealing at 673 and 973 K makes it increase first to 0.70 A/cm2 and decrease lately to 0.07 A/cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> , respectively. ON/OFF ratios for the as-fabricated B-diamond Schottky diode exceed 4.5 × 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>8</sup> at the OFF-voltage (V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>OFF</sub> ) of 0 V and 3.2 × 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>6</sup> at V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>OFF</sub> = 42.0 V. For the annealed Schottky diode, the ON/OFF ratios are higher than 1.7 × 106 at V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>OFF</sub> <; 6.0 V. Ideality factor and barrier height for Au/Pt bilayer gates on the B-diamond channel layer range from 1.05 to 1.78 and from 1.24 to 1.56 eV, respectively. All three B-diamond MESFETs with the gate lengths of 12.0, 7.0, and 4.3 μm, respectively, operate with p-type channel characteristics. The drain current maxima for the as-fabricated MESFETs are -0.11, -0.16, and -0.39 mA/mm. After annealing at 773 K, these values increase to -0.17, -0.24, and -0.55 mA/mm. Annealing at 773 K also increases the extrinsic transconductance maxima for the three MESFETs from 11.1, 11.0, and 10.4 μS/mm to 18.6, 16.2, and 14.4 μS/mm, respectively.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1972 - threshold voltages of normally off mesfet’s [Crossref]