Fabrication and characterization of a corner architecture Schottky barrier diode structure
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-09-10 |
| Journal | physica status solidi (a) |
| Authors | Shannon S. Nicley, Stephen Zajac, Robert Rechenberg, Michael Becker, Aaron Hardy |
| Institutions | Michigan State University, Fraunhofer USA |
| Citations | 11 |
Abstract
Section titled âAbstractâAbstract The corner architecture Schottky barrier diode (SBD) structure is proposed as an alternative vertical architecture for the realization of high power, high temperature, single crystal diamond diodes. The lightly doped layer of the diode is grown in a direction perpendicular to the previous epitaxial growth of the heavily doped layer, to reduce the threadingâtype dislocations in the active region of the fabricated diodes. The first ever corner architecture SBD is fabricated and evaluated for diode performance. The fabrication steps are described, including homoepitaxial diamond films deposited at high and low doping levels. Depositions are performed in microwave plasmaâassisted chemical vapor deposition (MPACVD) plasma disc bellâjar reactors, with feedgas mixtures including hydrogen, methane, and diborane. Schematic diagram of the corner architecture Schottky barrier diode.