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6CCVD Research

GaN on Diamond with Ultra-Low Thermal Barrier Resistance

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2016-03-31
AuthorsXing Gu, Cathy Lee, Jinqiao Xie, Edward Beam, Michael F. Becker

Abstract

Section titled ā€œAbstractā€

Abstract : We investigated the effective thermal boundaryresistance (TBReff) of GaN-on-Diamond interfaces fordiamond growth with a 5nm SiNx, a 5nm AlN interfaciallayer, or without any interfacial layers, respectively. It wasfound that the SiNx interfacial layers resulted in smooth andsharp interfaces, but direct growth of diamond on GaNexhibited very rough interfaces. TBReff is strongly correlatedwith interface quality. With a 5nm SiNx interfacial layer, aTBReff as low as 2.5 m2k/GW was achieved, which is morethan five times better than the previously reported best data,and close to the limit predicted by theoretical models forGaN-diamond interfaces

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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