Near-ultraviolet micro-Raman study of diamond grown on GaN
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-01-18 |
| Journal | Applied Physics Letters |
| Authors | Mohammad Nazari, B. L. Hancock, Jonathan Anderson, A. Savage, E. L. Piner |
| Institutions | Georgia Institute of Technology, Texas State University |
| Citations | 16 |
Abstract
Section titled āAbstractāUltraviolet (UV) micro-Raman measurements are reported of diamond grown on GaN using chemical vapor deposition. UV excitation permits simultaneous investigation of the diamond (D) and disordered carbon (DC) comprising the polycrystalline layer. From line scans of a cross-section along the diamond growth direction, the DC component of the diamond layer is found to be highest near the GaN-on-diamond interface and diminish with characteristic length scale of ā¼3.5 Ī¼m. Transmission electron microscopy (TEM) of the diamond near the interface confirms the presence of DC. Combined micro-Raman and TEM are used to develop an optical method for estimating the DC volume fraction.