Study on capacitance–voltage characteristics of diamond field-effect transistors with NO2 hole doping and Al2O3 gate insulator layer
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-02-29 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Makoto Kasu, Kazuyuki Hirama, Kazuya Harada, Toshiyuki Oishi |
| Institutions | Saga University, NTT Basic Research Laboratories |
| Citations | 23 |
Abstract
Section titled “Abstract”Abstract We study the capacitance-voltage ( C - V ) characteristics of thermally stable high-performance diamond field-effect transistors (FETs) with NO 2 hole doping and an Al 2 O 3 gate insulator layer. We measured C - V characteristics and obtained the results reproducibly. Then, we fitted the experimental C - V results by solving the Poisson equations self-consistently, and determined the interface parameters such as the interface fixed charge and interface states. On the basis of the results, we constructed band diagrams of the metal-oxide-semiconductor structure in a diamond FET and explained the interface properties.