Single crystal diamond wafers for high power electronics
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-03-19 |
| Journal | Diamond and Related Materials |
| Authors | Shinichi Shikata |
| Institutions | Kwansei Gakuin University |
| Citations | 186 |
Abstract
Section titled āAbstractāAccording to international energy proposal, about 25% of the total CO2 reduction should come from āend use efficiencyā. Hence, low loss power devices are an important technology for the 21st century. Diamond-based devices have the potential, but this would require fast development in order to contribute to the CO2 reduction plan early in this century. Here, we present a clear target for the R&D of diamond wafer. According to the expected applications of diamond devices with a vertical structure, the required target properties for first stage diamond wafers are; a killer defect density less than 0.1 cmā 2, resistivity less than 0.005 Ī© cm and a size of 4 in. For the final commercialization stage, targets of zero killer defects, resistivity of 0.001 Ī© cm and a size of 6 in. are proposed. The challenges and proposal solutions are reviewed for each technology.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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