Diamond Schottky Barrier Diodes With NO2Exposed Surface and RF-DC Conversion Toward High Power Rectenna
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-11-08 |
| Journal | IEEE Electron Device Letters |
| Authors | Toshiyuki Oishi, Naoto Kawano, Satoshi Masuya, Makoto Kasu |
| Institutions | Saga University |
| Citations | 15 |
Abstract
Section titled āAbstractāA novel diamond Schottky barrier diode (SBD) with H-terminated surface exposed to NO <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sub> gas is fabricated toward high power rectifying antenna (rectenna). The double NO <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sub> exposures are introduced to provide high concentration of 2-D hole gas at the diamond surface. Experimentally, our SBDs have shown to give good rectifier properties with the high current density of 24 A/cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> at a forward voltage of -2 V. A dual diode rectifier circuit using two diamond SBDs was designed with diode model constructed from experimental I-V curves. Values of circuit components such as dc block capacitance and load resistance were selected to achieve larger output voltage. Experimentally RF to dc conversion is demonstrated, where RF input voltage with 10 MHz and the amplitude of 9 V was converted into a dc output voltage as large as 4.2 V.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2016 - Developing a new thermal paradigm for gallium nitride (GaN) device technology