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6CCVD Research

Thermal design and simulation analysis of GaN based MPS switching diode

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2016-11-01
AuthorsSiwei Wu, Jianhua Zhang, Lianqiao Yang, Wu Xingyang, Luqiao Yin
InstitutionsShanghai University

Abstract

Section titled ā€œAbstractā€

Merged PiN/Schottky power (hereinafter referred to as MPS) switching diode has the advantages of high blocking voltage, low leakage current, high switching speed, high current, low voltage and so on. Based on the above advantages, in modern society, the power of MPS switching diode is getting larger and larger, which is used in many fields, and almost all electrical energy converts into heat, so that the chip junction temperature rises rapidly, when the temperature exceeds the maximum allowable temperature, the MPS power switching diode will be damaged due to overheating, so heat dissipation is the key problem for MPS package. In this study, the heat sink is installed under the MPS diode, so heat can be exchanged with the surrounding environment by adopting to forced convection, and combined with high thermal conductivity material as insulating layer of the MPS diode substrate, so the heat generated can be dissipated in a timely manner. In this paper, aiming at the heat characteristics of high power MPS switching diode, a three-dimensional model of the MPS power switching diode is constructed by using three-dimensional drawing software Solid-Works. The diamond like carbon (DLC) film and aluminum oxide (Al <inf xmlns:mml=ā€œhttp://www.w3.org/1998/Math/MathMLā€ xmlns:xlink=ā€œhttp://www.w3.org/1999/xlinkā€&gt;2&lt;/inf> O <inf xmlns:mml=ā€œhttp://www.w3.org/1998/Math/MathMLā€ xmlns:xlink=ā€œhttp://www.w3.org/1999/xlinkā€&gt;3&lt;/inf> ) film are respectively used as the insulating layers of the substrate, and the thermal analysis is carried out by ANSYS. Through changing the forced convection coefficient on the surface of the radiator, the relationship between the different convection coefficient and the maximum temperature of the device is obtained. In addition to thermal analysis, the temperature distribution of the device is obtained by infrared thermal imaging instrument test method.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2004 - Merged PiN/Schottky Diodes: A New Power Switching Diode
  2. 2014 - Study of merged PiN/Schottky diode(MPS)
  3. 2008 - LED packaging and thermal mangement materials
  4. 2014 - DLC thin films influence the thermal dissipation of LED lights
  5. 2011 - Finite Element Thermal Analysis on Package Bonding Materials of Power Type LED
  6. 2015 - DLC & AlN thin films influence the thermal conduction of HPLED light
  7. 2011 - Research on MPS Power Diode Design Optimization
  8. 2006 - Thermal Analysis of High-power Light-emitting Diode Packages

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