Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-11-01 |
| Authors | Oleg Babchenko, G. Vanko, J. Dzuba, Tibor IÅ¾Ć”k, MariĆ”n Vojs |
| Institutions | Czech Academy of Sciences, Institute of Physics, Institute of Electrical Engineering of the Slovak Academy of Sciences |
Abstract
Section titled āAbstractāThe issue of gate metallization stability on AlGaN/GaN heterostructure during the diamond deposition process has been studied. Among tested Ni, Ir, NiO and IrO <inf xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</inf> materials the iridium-based has the most promising characteristic to be used. The diamond growth in focused microwave plasma system on tranĀsistors with Ir and IrO <inf xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</inf> Schottky contact metallization has been demonstrated and discussed.