Diamond field-effect transistors for RF power electronics - Novel NO2 hole doping and low-temperature deposited Al2O3 passivation
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2016-12-28 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Makoto Kasu |
| Institutions | Saga University |
| Citations | 44 |
Abstract
Section titled āAbstractāAbstract Diamond possesses a combination of exceptional physical properties and is expected to be used as a semiconductor material in high-efficiency and high-power electronic devices. In this study, hole doping was observed when using NO 2 molecules on a H-diamond surface. The activation energy of hole concentration in NO 2 /H-diamond was measured as 0.006 eV, and holes were fully activated at room temperature. A thermal stabilization of the hole channel was realized by passivation with an atomic-layer-deposited Al 2 O 3 layer. The passivation method enabled the realization of a thermally stable high-performance diamond field-effect transistor (FET), which exhibited high-performance DC and RF characteristics. NO 2 hole-doping and Al 2 O 3 -passivation technologies enabled reproducible measurements of MOS structure electric properties. Such technologies also facilitated observations of two-dimensional holes at the MOS interface and type-II band alignment of Al 2 O 3 /NO 2 /H-diamond. Additionally, the band diagram under various gate bias conditions was proposed on the basis of capacitance-voltage measurements and analysis using Poissonās equations.