Doping effects on minority-carrier lifetimes in ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-01-01 |
| Authors | Naofumi Nishikawa, Satoshi Takeichi, Shuya Tategami, Kenjiro Takauchi, Naoki Matsuda |
| Institutions | Kyushu Institute of Technology, University of Miyazaki |
Abstract
Section titled âAbstractâUltrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite (UNCD/a-C:H) films possess specific characteristics as follows: (a) the appearance of additional energy levels in diamond bandgap [1]; and (b) large absorption coefficients ranging from visible to ultraviolet [2], both of which might be due to large number of grain boundaries between UNCD grains and those between UNCD grains and a-C:H [1,3]. Owing to the above-mentioned specifics, UNCD/a-C:H films are expected to be applied to photovoltaics such as UV sensors. Actually, we have fabricated pn heterojunction diodes comprising UNCD/a- C:H films and Si substrates, and confirmed their photocurrents [4,5]. Although the minority-carrier lifetime is an important factor for photovoltaics, it has never been studied for UNCD/a-C:H. In this work, we experimentally measured the minority carrier lifetimes for typical samples.