High-Performance Electron Field Emitters and Microplasma Cathodes Based on Conductive Hybrid Granular Structured Diamond Materials
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-01-13 |
| Journal | ACS Applied Materials & Interfaces |
| Authors | Adhimoorthy Saravanan, BohrāRan Huang, Divinah Manoharan, IāNan Lin |
| Institutions | Tamkang University, National Taiwan University of Science and Technology |
| Citations | 13 |
Abstract
Section titled āAbstractāHigh-performance diamond electron field emitters (EFEs) with extremely low turn-on field (E<sub>0</sub> = 1.72 V/Ī¼m) and high current density (1.70 mA/cm<sup>2</sup> at an applied field of 3.86 V/Ī¼m) were successfully synthesized by using a modified two-step microwave plasma chemical deposition process. Such emitters possess EFE properties comparable with most of carbon- or semiconductor-based EFE materials, but with markedly better lifetime stability. The superb EFE behavior of these materials was achieved owing to the reduction in the diamond-to-Si interfacial resistance and the increase in the conductivity of the bulk diamond films (HBD<sub>-400 V</sub>) via the applications of high bias voltage during the preparation of the ultrananocrystalline diamond (UNCD) primary layer and the subsequent plasma post-treatment (PPT) process, respectively. The superior EFE properties along with enhanced robustness of HBD<sub>-400 V</sub> films compared with the existing diamond-based EFE materials rendered these materials of greater potential for applications in high brightness display and multifunctional microplasma.