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6CCVD Research

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-02-13
JournalIEEE Transactions on Electron Devices
AuthorsT. Paul Chow, Ichiro Omura, Masataka Higashiwaki, Hiroshi Kawarada, Vipindas Pala
InstitutionsRensselaer Polytechnic Institute, Waseda University
Citations149

Abstract

Section titled ā€œAbstractā€

We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2016 - Recent progress in Ga2O3 power devices [Crossref]
  2. 2013 - Depletion-mode Ga2O3 MOSFETs on $\beta $ -Ga2O3 (010) substrates with Si-ion-implanted channel and contacts

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