Free-standing Lateral AlGaN/GaN Schottky Barrier Diode Based-on GaN-on-Si Technology for High Microwave Power Applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-09-23 |
| Authors | Abdalla Eblabla, W. B. Sampson, Adam Collier, K. Elgaid |
| Institutions | Cardiff University |
| Citations | 1 |
Abstract
Section titled āAbstractāThis paper presents the development of a lateral AlGaN/GaN Schottky barrier diode (SBD) on free-standing GaN epilayers achieved through Si substrate removal for GaN-on-Si technology. Compared to conventional SBDs on GaN-on-Si, the newly developed free-standing AlGaN/GaN SBDs exhibit enhanced RF performance (cut-off frequency (f C ) and ideality factor (Ī· n ) without compromising DC performance. DC results reveal an onset voltage (V ON ) of 1.34 V, on-resistance (R ON ) of 1.6 Ī©ā¢mm, and Ī· n of 1.7 (14% improvement). Reverse-breakdown voltage (V BV ) exceeds 30 V, with a reverse-bias leakage current (I R ) below 38 Ī¼A/mm. RF performance demonstrates a f C of 80.2 GHz at zero-bias (11.14% enhancement). The impact of lossy Si substrate coupling effects on RF performance for both SBD structures was studied using 3D-EM simulations for further performance optimisation. These findings imply integrated GaNbased SBDs on Si technology are suitable for high-power and high-temperature system applications at millimetre-wave frequencies, particularly in conjunction with high-thermal coefficient materials such as diamond and AlN.