High Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor Devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-05-15 |
| Journal | Materials science forum |
| Authors | Satoshi Tanimoto, Tatsuhiro Suzuki, Sawa Araki, Toshiharu Makino, Hiromitsu Kato |
| Institutions | Nissan (United Kingdom) |
| Citations | 2 |
Abstract
Section titled āAbstractāThe long-term reliability of Schottky pn diodes (SPNDs) on diamond having widely used Ti/Pt/Au electrodes was investigated at 500Ā°C in order to identify degradation phenomena at higher temperatures. A vital degradation event was observed after the passage of about 100 hours in that both forward and reverse currents were progressively reduced. AES depth profiling and X-STEM-EELS analyses revealed that this occurred because the Ti contact material changed to insulating (or semiconductive) TiO 2 , causing large series resistance.