Comparison of GaN HEMTs on Diamond and SiC Substrates
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-07-18 |
| Authors | Jonathan Felbinger, M. V. Sharath Chandra, Yang Sun, L.F. Eastman, J. Wasserbauer |
| Institutions | Cornell University |
Abstract
Section titled âAbstractâThe performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal Sourceâ- DOI: None