Analysis of diamond pseudo-vertical Schottky barrier diode through patterning tungsten growth method
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-02-26 |
| Journal | Applied Physics Letters |
| Authors | Dan Zhao, Zhangcheng Liu, Xiaofan Zhang, Minghui Zhang, Yanfeng Wang |
| Institutions | Xiāan Jiaotong University, Tokushima University |
| Citations | 13 |
Abstract
Section titled āAbstractāIn this study, diamond pseudo-vertical architecture Schottky barrier diodes (PVSBDs) through the patterning tungsten growth method have been investigated. The forward current density is 16 A/cm2 at 5 V, and a rectification ratio is more than 5 orders of magnitude at Ā±5 V for diamond PVSBD. The reverse breakdown voltage is 640 V, and the corresponding electrical field is 4.57 MV/cm. These results are obtained by patterning tungsten (W) on the diamond surface as a blocking layer and growing a diamond epitaxial layer on the uncovered zone. A W/diamond ohmic contact was formed during the diamond epitaxial layer growth process. An aluminum film was used as a Schottky contact. Overall, the results illustrate that W patterned growth to fabricate PVSBD is efficient.