Surface Planarization with Gas Cluster Ion Beams and Application to Wide-Bandgap Semiconductors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-03-01 |
| Journal | International Journal of Automation Technology |
| Authors | Noriaki Toyoda |
| Citations | 5 |
Abstract
Section titled āAbstractāIn this study, the fundamental sputtering effects of gas cluster ion beams (GCIBs), especially for surface planarization, are reported. Because gas cluster ions are aggregates of thousands of gas atoms, the collision process for a GCIB, with dense and multiple collisions, differs from that of atomic ions via collision cascading; thus, GCIBs have many unique irradiation effects. Among them, the low-damage and surface smoothing effects are beneficial for the planarization of wide-bandgap semiconductor wafers. The planarization of SiC, diamond, and GaN has been demonstrated using GCIB irradiation.