Design and Characterization of 2DEG Structure of a Gallium Nitride HEMT
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-01-01 |
| Journal | 2019 International Conference on Robotics,Electrical and Signal Processing Techniques (ICREST) |
| Authors | Jahid Chowdhury Choton, Afshana Begum, Jibesh Kanti Saha |
| Institutions | Shahjalal University of Science and Technology |
| Citations | 5 |
Abstract
Section titled āAbstractāIn this work we introduced 2DEG (2-Dimentional Electron Gas) structure of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) and compared it with a conventional structure. 2DEG structure is a heterostructure which is formed by combination of group III-IV elements. Our proposed GaN HEMT can be employed for high speed, high power, and high voltage applications. For high power applications we used SOD (Silicon-On-Diamond) technology to transfer heat to the substrate. This research paper will present design of two models using SILVACO TCAD device simulation software. One is the design of 2DEG structure and another one is the conventional structure of Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) HEMT.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2012 - Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG
- 2007 - A 9.5–10.5GHz 60W AlGaN/GaN HEMT for X-band high power application
- 2015 - Modelling of GaN power switches
- 2009 - Electrical and thermal analysis of gallium nitride HEMTs